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IS41LV16100A
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
* TTL compatible inputs and outputs; tristate I/O * Refresh Interval: -- Auto refresh Mode: 1,024 cycles /16 ms -- RAS-Only, CAS-before-RAS (CBR), and Hidden * JEDEC standard pinout * Single power supply: -- 3.3V 10% (IS41LV16100A) * Byte Write and Byte Read operation via two CAS * Industrial Temperature Range: -40oC to +85oC * Lead-free available
ISSI
MARCH 2005
(R)
DESCRIPTION
The ISSI IS41LV16100A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. These features make the IS41LV16100A ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS41LV16100A is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter -50 50 14 25 30 85 -60 60 15 30 40 110 Unit ns ns ns ns ns
PIN CONFIGURATIONS
50(44)-Pin TSOP (Type II) 42-Pin SOJ
Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA)
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND
VDD I/O0 I/O1 I/O2 I/O3 VDD I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND
VDD I/O0 I/O1 I/O2 I/O3 VDD I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
Min. EDO Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC)
PIN DESCRIPTIONS
A0-A9 I/O0-15 WE OE RAS UCAS LCAS VDD GND NC Address Inputs Data Inputs/Outputs Write Enable Output Enable Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Power Ground No Connection
Copyright (c) 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 03/02/05
1
IS41LV16100A
FUNCTIONAL BLOCK DIAGRAM
ISSI
(R)
OE WE LCAS UCAS CAS CLOCK GENERATOR WE CONTROL LOGICS OE CONTROL LOGIC
OE
CAS
WE
RAS
RAS CLOCK GENERATOR
DATA I/O BUS
REFRESH COUNTER
DATA I/O BUFFERS
ROW DECODER
RAS
COLUMN DECODERS SENSE AMPLIFIERS
I/O0-I/O15
MEMORY ARRAY 1,048,576 x 16
ADDRESS BUFFERS A0-A9
2
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Rev. B 03/02/05
IS41LV16100A
TRUTH TABLE
Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) Read-Write(1,2) EDO Page-Mode Read(2) 1st Cycle: 2nd Cycle: Any Cycle: EDO Page-Mode Write(1) 1st Cycle: 2nd Cycle: EDO Page-Mode(1,2) Read-Write Hidden Refresh RAS-Only Refresh CBR Refresh(4) 1st Cycle: 2nd Cycle: Read(2) Write(1,3) RAS H L L L L L L L L L L L L L L LHL LHL L HL LCAS UCAS H L L H L L H L HL HL LH HL HL HL HL L L H L H L H L L H L L HL HL LH HL HL HL HL L L H L WE X H H H L L L HL H H H L L HL HL H L X X OE X L L L X X X LH L L L X X LH LH L X X X Address tR/tC X ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL NA/COL NA/NA ROW/COL NA/COL ROW/COL NA/COL ROW/COL ROW/COL ROW/NA X I/O
ISSI
High-Z DOUT
(R)
Lower Byte, DOUT Upper Byte, High-Z Lower Byte, High-Z Upper Byte, DOUT DIN Lower Byte, DIN Upper Byte, High-Z Lower Byte, High-Z Upper Byte, DIN DOUT, DIN DOUT DOUT DOUT DIN DIN DOUT, DIN DOUT, DIN DOUT DOUT High-Z High-Z
Notes: 1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active). 2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active). 3. EARLY WRITE only. 4. At least one of the two CAS signals must be active (LCAS or UCAS).
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Rev. B 03/02/05
3
IS41LV16100A
Functional Description
The IS41LV16100A is a CMOS DRAM optimized for highspeed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 16 address bits. These are entered ten bits (A0-A9) at time. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS). RAS is used to latch the first nine bits and CAS is used to latch the latter nine bits. The IS41LV16100A has two CAS controls, LCAS and UCAS. The LCAS and UCAS inputs internally generates a CAS signal functioning in an identical manner to the single CAS input on the other 1M x 16 DRAMs. The key difference is that each CAS controls its corresponding I/O tristate logic (in conjunction with OE and WE and RAS). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15. The IS41LV16100A CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41LV16100A both BYTE READ and BYTE WRITE cycle capabilities.
ISSI
Auto Refresh Cycle
(R)
To retain data, 1,024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory. 1. By clocking each of the 1,024 row addresses (A0 through A9) with RAS at least once every 128 ms. Any read, write, readmodify-write or RAS-only cycle refreshes the addressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 9-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle.
Extended Data Out Page Mode
EDO page mode operation permits all 1,024 columns within a selected row to be randomly accessed at a high data rate. In EDO page mode read cycle, the data-out is held to the next CAS cycle's falling edge, instead of the rising edge. For this reason, the valid data output time in EDO page mode is extended compared with the fast page mode. In the fast page mode, the valid data output time becomes shorter as the CAS cycle time becomes shorter. Therefore, in EDO page mode, the timing margin in read cycle is larger than that of the fast page mode even if the CAS cycle time becomes shorter. In EDO page mode, due to the extended data function, the CAS cycle time can be shorter than in the fast page mode if the timing margin is the same. The EDO page mode allows both read and write operations during one RAS cycle, but the performance is equivalent to that of the fast page mode in that case. Power-On After application of the VDD supply, an initial pause of 200 s is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VDD or be held at a valid VIH to avoid current surges.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed. Read Cycle A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters.
Write Cycle
A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs first.
4
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Rev. B 03/02/05
IS41LV16100A
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VT VDD IOUT PD TA TSTG Parameters Voltage on Any Pin Relative to GND Supply Voltage Output Current Power Dissipation Commercial Operation Temperature Industrial Operation Temperature Storage Temperature 3.3V 3.3V Rating -0.5 to +4.6 -0.5 to +4.6 50 1 0 to +70 -40 to +85 -55 to +125 Unit V V mA W C C C
ISSI
(R)
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol VDD VIH VIL TA Parameter Supply Voltage Input High Voltage Input Low Voltage Commercial Ambient Temperature Industrial Ambient Temperature 3.3V 3.3V 3.3V Min. 3.0 2.0 -0.3 0 -40 Typ. 3.3 -- -- -- -- Max. 3.6 VDD + 0.3 0.8 70 85 Unit V V V C C
CAPACITANCE(1,2)
Symbol CIN1 CIN2 CIO Parameter Input Capacitance: A0-A9 Input Capacitance: RAS, UCAS, LCAS, WE, OE Data Input/Output Capacitance: I/O0-I/O15 Max. 5 7 7 Unit pF pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz.
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5
IS41LV16100A
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.) Symbol IIL IIO VOH VOL ICC1 ICC2 ICC3 Parameter Input Leakage Current Output Leakage Current Output High Voltage Level Output Low Voltage Level Standby Current: TTL Standby Current: CMOS Operating Current: Random Read/Write(2,3,4) Average Power Supply Current Operating Current: EDO Page Mode(2,3,4) Average Power Supply Current Refresh Current: RAS-Only(2,3) Average Power Supply Current Refresh Current: CBR(2,3,5) Average Power Supply Current Test Condition Any input 0V VIN VDD Other inputs not under test = 0V Output is disabled (Hi-Z) 0V VOUT VDD IOH = -2.0 mA (3.3V) IOL = 2.0 mA (3.3V) RAS, LCAS, UCAS VIH Commercial 3.3V Industrial 3.3V 3.3V -50 -60 -50 -60 -50 -60 -50 -60 Speed Min. -10 -10 2.4 -- -- -- -- -- -- -- -- -- -- -- --
ISSI
Max. 10 10 -- 0.4 3 4 2 180 170 180 170 180 170 180 170 A A V V mA mA mA mA
(R)
Unit
RAS, LCAS, UCAS VDD - 0.2V RAS, LCAS, UCAS, Address Cycling, tRC = tRC (min.) RAS = VIL, LCAS, UCAS, Cycling tPC = tPC (min.) RAS Cycling, LCAS, UCAS VIH tRC = tRC (min.) RAS, LCAS, UCAS Cycling tRC = tRC (min.)
ICC4
mA
ICC5
mA
ICC6
mA
Notes: 1. An initial pause of 200 s is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each EDO page cycle. 5. Enables on-chip refresh and address counters.
6
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Rev. B 03/02/05
IS41LV16100A
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.) -50 Symbol tRC tRAC tCAC tAA tRAS tRP tCAS tCP tCSH tRCD tASR tRAH tASC tCAH tAR tRAD tRAL tRPC tRSH tCLZ tCRP tOD tOE/tOEA tOEHC tOEP tOES tRCS tRRH tRCH tWCH tWCR Parameter Random READ or WRITE Cycle Time Access Time from RAS Access Time from CAS RAS Pulse Width RAS Precharge Time CAS Pulse Width CAS Hold Time
(26) (9, 25) (6, 7) (6, 8, 15) (6)
ISSI
-60 Max. -- 50 14 25 10K -- 10K -- -- 37 -- -- -- -- -- 25 -- -- -- -- -- 12 14 -- -- -- -- -- -- -- -- Min. 110 -- -- -- 60 40 10 10 60 20 0 10 0 10 40 15 30 5 15 0 5 3 -- 15 10 5 0 0 0 10 50 Max. -- 60 15 30 10K -- 10K -- -- 45 -- -- -- -- -- 30 -- -- -- -- -- 12 15 -- -- -- -- -- -- -- -- Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Min. 85 -- -- -- 50 30 8 9 50
(10, 20)
(R)
Access Time from Column-Address
CAS Precharge Time
(21)
RAS to CAS Delay Time Row-Address Hold Time
12 0 8
Row-Address Setup Time Column-Address Setup Time Column-Address Hold Time
(20)
0 8 30 14 25 5 14 0
(20)
Column-Address Hold Time (referenced to RAS) RAS to Column-Address Delay Time(11) Column-Address to RAS Lead Time RAS to CAS Precharge Time RAS Hold Time
(27) (15, 29) (21)
CAS to Output in Low-Z Output Disable Time Output Enable Time
CAS to RAS Precharge Time
(19, 28, 29) (15, 16)
5 3 -- 15 10 5 0 0 0 8 40
OE HIGH Hold Time from CAS HIGH OE HIGH Pulse Width OE LOW to CAS HIGH Setup Time Read Command Setup Time
(17, 20)
Read Command Hold Time (referenced to RAS)(12) Read Command Hold Time (referenced to CAS)(12, 17, 21) Write Command Hold Time(17, 27) Write Command Hold Time (referenced to RAS)(17)
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IS41LV16100A
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.) -50 Symbol tWP tWPZ tRWL tCWL tWCS tDHR tOEH tDS tDH tRWC tRWD tCWD tAWD tPC tRASP tCPA tPRWC tCOH tOFF tWHZ tCLCH tCSR tCHR tORD tREF tT Parameter Write Command Pulse Width
(17)
ISSI
-60 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100K 30 -- -- 12 10 -- -- -- -- 16 50 Min. 10 10 15 15 0 40 15 0 15 155 85 40 55 40 60 -- 56 5 3 3 10 5 10 0 -- 3 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100K 35 -- -- 15 15 -- -- -- -- 16 50 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns Min. 8 10 13 8 0 39 14 0 8 110 65 26
(14)
(R)
WE Pulse Widths to Disable Outputs Write Command to RAS Lead Time(17) Write Command to CAS Lead Time Write Command Setup Time
(14, 17, 20) (17, 21)
Data-in Hold Time (referenced to RAS) OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) Data-In Setup Time(15, 22) Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) CAS to WE Delay Time(14, 20) Column-Address to WE Delay Time EDO Page Mode READ or WRITE Cycle Time(24) RAS Pulse Width in EDO Page Mode Access Time from CAS Precharge EDO Page Mode READ-WRITE Cycle Time(24) Data Output Hold after CAS LOW Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 29) Output Disable Delay from WE Last CAS going LOW to First CAS returning HIGH(23) CAS Setup Time (CBR REFRESH)(30, 20) CAS Hold Time (CBR REFRESH)(30, 21) OE Setup Time prior to RAS during HIDDEN REFRESH Cycle Auto Refresh Period (1,024 Cycles) Transition Time (Rise or Fall)(2, 3)
(15)
40 30 50 -- 56 5 3 3 10 5 8 0 -- 3
8
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Rev. B 03/02/05
IS41LV16100A
AC TEST CONDITIONS
Output load: One TTL Load and 50 pF (VDD = 3.3V 10%) Input timing reference levels: VIH = 2.0V, VIL = 0.8V (VDD = 3.3V 10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V
ISSI
(R)
Notes: 1. An initial pause of 200 s is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD tRWD (MIN), tAWD tAWD (MIN) and tCWD tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. The first CAS edge to transition LOW. 21. The last CAS edge to transition HIGH. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 23. Last falling CAS edge to first rising CAS edge. 24. Last rising CAS edge to next cycle's last rising CAS edge. 25. Last rising CAS edge to first falling CAS edge. 26. Each CAS must meet minimum pulse width. 27. Last CAS to go LOW. 28. I/Os controlled, regardless UCAS and LCAS. 29. The 3 ns minimum is a parameter guaranteed by design. 30. Enables on-chip refresh and address counters.
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9
IS41LV16100A
READ CYCLE
ISSI
tRC tRAS tRP
(R)
RAS
tCSH tCRP tRCD tRSH tCAS tCLCH tRRH
UCAS/LCAS
tAR tASR tRAD tRAH tRAL tASC tCAH
ADDRESS WE
Row
tRCS
Column
tRCH
Row
tAA tRAC tCAC tCLC
tOFF(1)
I/O OE
Open
tOE
Valid Data
tOD
Open
tOES
Undefined Don't Care
Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
10
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Rev. B 03/02/05
IS41LV16100A
EARLY WRITE CYCLE (OE = DON'T CARE)
ISSI
tRC tRAS tRP
(R)
RAS
tCSH tCRP tRCD tRSH tCAS tCLCH
UCAS/LCAS
tAR tASR tRAD tRAH tASC tRAL tCAH tACH
ADDRESS
Row
Column
tCWL tRWL tWCR tWCS tWCH tWP
Row
WE
tDHR tDS tDH
I/O
Valid Data
Don't Care
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11
IS41LV16100A
READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
ISSI
tRWC tRAS tRP
(R)
RAS
tCSH tCRP tRCD tRSH tCAS tCLCH
UCAS/LCAS
tAR tASR tRAD tRAH tRAL tASC tCAH tACH
ADDRESS
Row
tRCS
Column
tRWD tCWD tAWD
Row
tCWL tRWL tWP
WE
tAA tRAC tCAC tCLZ tDS tDH
I/O
Open
tOE
Valid DOUT
tOD
Valid DIN
Open
tOEH
OE
Undefined Don't Care
12
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Rev. B 03/02/05
IS41LV16100A
EDO-PAGE-MODE READ CYCLE
ISSI
tRASP tRP
(R)
RAS
tCSH tCRP tRCD tCAS, tCLCH tPC(1) tCAS, tCP tCLCH tCP tRSH tCAS, tCLCH tCP
UCAS/LCAS
tAR tRAD tASR tASC tCAH tASC tCAH tASC tRAL tCAH
ADDRESS
Row
tRAH tRCS
Column
Column
Column
tRCH
Row
tRRH
WE
tAA tRAC tCAC tCLZ tCAC tCOH tAA tCPA tCAC tCLZ tAA tCPA tOFF
I/O
Open
tOE tOES
Valid Data
Valid Data
tOEHC tOD tOES
Valid Data
tOE
Open
tOD
OE
tOEP
Undefined Don't Care
Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications.
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13
IS41LV16100A
EDO-PAGE-MODE EARLY-WRITE CYCLE
tRASP
ISSI
tRP tRHCP tCSH tPC tCAS, tCLCH tCP tCAS, tCLCH tCP tRSH tCAS, tCLCH tACH tRAL tCAH
(R)
RAS
tCRP tRCD
tCP
UCAS/LCAS
tAR tRAD tASR tASC tACH tCAH tASC tACH tCAH tASC
ADDRESS
Row
tRAH
Column
tCWL tWCS tWCH tWP
Column
tCWL tWCS tWCH tWP
Column
tCWL tWCS tWCH tWP
Row
WE
tWCR tDHR tDS tDH tRWL tDS tDH tDS tDH
I/O OE
Valid Data
Valid Data
Valid Data
Don't Care
14
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IS41LV16100A
ISSI
tRASP tRP
(R)
EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles)
RAS
tCSH tCRP tRCD tCAS, tCLCH tCP tPC / tPRWC(1) tCAS, tCLCH tCP tRSH tCAS, tCLCH tCP
UCAS/LCAS
tASR tRAH tAR tRAD tASC tRAL tCAH
tCAH
tASC
tCAH
tASC
ADDRESS
Row
tRWD tRCS
Column
tCWL tWP tAWD tCWD
Column
tCWL tWP tAWD tCWD
Column
tRWL tCWL tWP tAWD tCWD
Row
WE
tAA tRAC tCAC tCLZ tDH tDS tAA tCPA tCAC tCLZ tDH tDS tAA tCPA tCAC tCLZ tDH tDS
I/O
Open
tOE
DOUT
DIN
tOD tOE
DOUT
DIN
tOD tOE
DOUT
DIN
tOD tOEH
Open
OE
Undefined Don't Care
Note: 1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the tPC specifications.
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15
IS41LV16100A
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Pseudo READ-MODIFY WRITE)
ISSI
tRASP tRP
(R)
RAS
tCSH tPC tCRP tRCD tCAS tCP tCAS tPC tCP tRSH tCAS tCP
UCAS/LCAS
tASR tRAH tAR tRAD tASC tACH tRAL tCAH
tCAH
tASC
tCAH
tASC
ADDRESS
Row
tRCS
Column (A)
Column (B)
tRCH tWCS
Column (N)
tWCH
Row
WE
tAA tRAC tCAC tCPA tCAC tCOH tAA tWHZ tDS tDH
I/O
Open
tOE
Valid Data (A)
Valid Data (B)
DIN
Open
OE
Don't Care
16
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IS41LV16100A
AC WAVEFORMS READ CYCLE (With WE-Controlled Disable)
ISSI
(R)
RAS
tCSH tCRP tRCD tCAS tCP
UCAS/LCAS
tAR tASR tRAD tRAH tASC tCAH tASC
ADDRESS WE
Row
tRCS
Column
tRCH tRCS
Column
tAA tRAC tCAC tCLZ
tWHZ
tCLZ
I/O OE
Open
tOE
Valid Data
Open
tOD
Undefined Don't Care
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE) RAS
tRC tRAS tRP
RAS
tCRP tRPC
UCAS/LCAS
tASR tRAH
ADDRESS I/O
Row Open
Row
Don't Care
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 03/02/05
17
IS41LV16100A
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
ISSI
tRP tRAS tRP tRAS
(R)
RAS
tRPC tCP tCHR tCSR tRPC tCSR tCHR
UCAS/LCAS I/O Open
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
tRAS
tRP
tRAS
RAS
tCRP tRCD tRSH tCHR
UCAS/LCAS
tAR tASR tRAD tRAH tASC tRAL tCAH
ADDRESS
Row
Column
tAA tRAC tCAC tCLZ tOFF(2)
I/O
Open
tOE tORD
Valid Data
Open
tOD
OE
Undefined Don't Care
Notes: 1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH. 2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
18
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 03/02/05
IS41LV16100A
ORDERING INFORMATION : 3.3V Commercial Range: 0C to +70C
Speed (ns) 50 Order Part No. IS41LV16100A-50K IS41LV16100A-50KL IS41LV16100A-50T IS41LV16100A-50TL IS41LV16100A-60K IS41LV16100A-60KL IS41LV16100A-60T IS41LV16100A-60TL Package 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free
ISSI
(R)
60
Industrial Range: -40C to +85C
Speed (ns) 50 Order Part No. IS41LV16100A-50KI IS41LV16100A-50KLI IS41LV16100A-50TI IS41LV16100A-50TLI IS41LV16100A-60KI IS41LV16100A-60KLI IS41LV16100A-60TI IS41LV16100A-60TLI Package 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free 400-mil SOJ 400-mil SOJ, Lead-free 400-mil TSOP (Type II) 400-mil TSOP (Type II), Lead-free
60
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 03/02/05
19
PACKAGING INFORMATION
400-mil Plastic SOJ Package Code: K
ISSI
Notes: 1. Controlling dimension: millimeters. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Reference document: JEDEC MS-027.
(R)
N
N/2+1
E1
E
1
N/2
D A
SEATING PLANE
b
C A2
e
B
A1
E2
Symbol No. Leads A A1 A2 B b C D E E1 E2 e
Millimeters Inches Min Max Min Max (N) 28 3.25 3.75 0.128 0.148 0.64 -- 0.025 -- 2.08 -- 0.082 -- 0.38 0.51 0.015 0.020 0.66 0.81 0.026 0.032 0.18 0.33 0.007 0.013 18.29 18.54 0.720 0.730 11.05 11.30 0.435 0.445 10.03 10.29 0.395 0.405 9.40 BSC 0.370 BSC 1.27 BSC 0.050 BSC
Millimeters Min Max 32 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 20.82 21.08 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC
Inches Min Max 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 0.820 0.830 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC
Millimeters Min Max 36 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 23.37 23.62 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC
Inches Min Max 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 0.920 0.930 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 10/29/03
PACKAGING INFORMATION
ISSI
Millimeters Min Max 42 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 27.18 27.43 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 1.070 1.080 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 44 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 28.45 28.70 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 1.120 1.130 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Inches Min Max
(R)
Millimeters Inches Symbol Min Max Min Max No. Leads (N) 40 A 3.25 3.75 0.128 0.148 A1 0.64 -- 0.025 -- A2 2.08 -- 0.082 -- B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 D 25.91 26.16 1.020 1.030 E 11.05 11.30 0.435 0.445 E1 10.03 10.29 0.395 0.405 E2 9.40 BSC 0.370 BSC e 1.27 BSC 0.050 BSC
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 10/29/03
PACKAGING INFORMATION
Plastic TSOP Package Code: T (Type II)
ISSI
N/2+1
Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the
(R)
N
E1 E
package.
4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
1 D
N/2
SEATING PLANE
A
e
b
L A1
c
Plastic TSOP (T - Type II) (MS 25) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 24/26 A 1.20 0.0472 A1 0.05 0.15 0.002 0.0059 b 0.30 0.51 0.012 0.0201 c 0.12 0.21 0.005 0.0083 D 17.01 17.27 0.670 0.6899 E1 7.49 7.75 0.295 0.3051 e 1.27 BSC 0.050 BSC E 9.02 9.42 0.462 0.4701 L 0.40 0.60 0.016 0.0236 0 5 0 5
Plastic TSOP (T - Type II) (MS 24) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 40/44 A 1.20 0.0472 A1 0.05 0.15 0.002 0.0059 b 0.30 0.45 0.012 0.0157 c 0.12 0.21 0.005 0.0083 D 18.31 18.51 0.721 0.7287 E1 10.06 10.26 0.396 0.4040 e 0.80 BSC 0.031 BSC E 11.56 11.96 0.455 0.4709 L 0.40 0.60 0.016 0.0236 0 8 0 8
Plastic TSOP (T - Type II) (MS 24) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 44/50 A 1.20 0.0472 A1 0.05 0.15 0.002 0.0059 b 0.30 0.45 0.012 0.0157 c 0.12 0.21 0.005 0.0083 D 20.85 21.05 0.821 0.8287 E1 10.06 10.26 0.396 0.4040 e 0.80 BSC 0.031 BSC E 11.56 11.96 0.455 0.4709 L 0.40 0.60 0.016 0.0236 0 8 0 8
Integrated Silicon Solution, Inc.
PK13197T40 Rev. C 08/013/99

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